FERNANDO LEONEL AGUIRRE

Datos académicos

Lugar de trabajo	UNIVERSIDAD TECNOLOGICA NACIONAL / FACULTAD REGIONAL BUENOS AIRES / UNIDAD DE INVESTIGACION Y DESARROLLO DE LAS INGENIERIAS
Campo de aplicación	Espacio-Vehiculos y proyectos
Especialidad	Nanoelectrónica y física de dispositivos.

PRODUCCION CIENTÍFICO TECNOLÓGICA

Mostrando ítems 1-19 de 19

Artículo A review on dielectric breakdown in thin dielectrics: Silicon Dioxide, High-k, and Layered Dielectrics

Palumbo, Félix Roberto Mario ; Wen, Chao; Lombardo, Salvatore; Pazos, Sebastián Matías ; Aguirre, Fernando Leonel ; Eizenberg, Moshe; Hui, Fei; Lanza, Mario (Wiley VCH Verlag, 2019-04-30)
Artículo Application of the quasi-static memdiode model in cross-point arrays for large dataset pattern recognition

Aguirre, Fernando Leonel ; Pazos, Sebastián Matías ; Palumbo, Felix Roberto Mario ; Suñé, Jordi; Miranda, Enrique (Institute of Electrical and Electronics Engineers, 2019-11)
Artículo Assessment and Improvement of the Pattern Recognition Performance of Memdiode-Based Cross-Point Arrays with Randomly Distributed Stuck-at-Faults

Aguirre, Fernando Leonel ; Pazos, Sebastián Matías ; Palumbo, Félix Roberto Mario ; Morell, Antoni; Suñé, Jordi; Miranda, Enrique (MDPI, 2021-10-06)
Artículo Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

Pazos, Sebastián Matías ; Aguirre, Fernando Leonel ; Miranda, Enrique; Lombardo, Salvatore; Palumbo, Félix Roberto Mario (American Institute of Physics, 2017-03)
Artículo Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

Aguirre, Fernando Leonel ; Ranjan, Alok; Raghavan, Nagarajan; Padovani, Andrea; Pazos, Sebastián Matías ; Vega, Nahuel Agustín ; Müller, Nahuel Agustín; Debray, Mario Ernesto; Molina Reyes, Joel; Pey, Kin-Leong; Palumbo, Félix Roberto Mario (Japan Society Applied Physics, 2021-10)
Artículo Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

Aguirre, Fernando Leonel ; Pazos, Sebastián Matías ; Palumbo, Félix Roberto Mario ; Fadida, S.; Winter, R.; Eizenberg, M. (American Institute of Physics, 2018-04)
Artículo Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

Maldonado, David; Aguirre, Fernando Leonel ; González Cordero, G.; Roldán, A. M.; González, M. B.; Jiménez Molinos, F.; Campabadal, F.; Miranda, E.; Roldán, J. B. (American Institute of Physics, 2021-08)
Artículo Hot-carrier-injection resilient RF power amplifier using adaptive bias

Pazos, Sebastián Matías ; Aguirre, Fernando Leonel ; Palumbo, Félix Roberto Mario ; Silveira, Fernando (Elsevier, 2020-11)
Artículo Impact of bilayered oxide stacks on the breakdown transients of Metal-Oxide-Semiconductor devices: an experimental study

Pazos, Sebastián Matías ; Boyeras Baldomá, Santiago ; Aguirre, Fernando Leonel ; Krylov, Igor; Eizenberg, M.; Palumbo, Felix Roberto Mario (American Institute of Physics, 2020-05)
Artículo Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs

Palumbo, Félix Roberto Mario ; Aguirre, Fernando Leonel ; Pazos, Sebastián Matías ; Krylov, Igor; Winter, Roy; Eizenberg, Moshe (Pergamon-Elsevier Science Ltd, 2018-11)
Artículo Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks

Pazos, Sebastián Matías ; Aguirre, Fernando Leonel ; Tang, K.; McIntyre, P.; Palumbo, Félix Roberto Mario (American Institute of Physics, 2018-12)
Artículo Minimization of the line resistance impact on memdiode-based simulations of multilayer perceptron arrays applied to pattern recognition

Aguirre, Fernando Leonel ; Gomez, Nicolás M.; Pazos, Sebastián Matías ; Palumbo, Félix Roberto Mario ; Suñé, Jordi; Miranda, Enrique (MDPI AG, 2021-03)
Artículo Performance-reliability trade-offs in short range RF power amplifier design

Pazos, Sebastián Matías ; Aguirre, Fernando Leonel ; Palumbo, Félix Roberto Mario ; Silveira, F. (Pergamon-Elsevier Science Ltd, 2018-09)
Artículo Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

Fontana, Andrés; Pazos, Sebastián Matías ; Aguirre, Fernando Leonel ; Vega, Nahuel Agustín ; Muller, Nahuel; De la Fourniere, Emmanuel; Silveira, Fernando; Debray, Mario Ernesto; Palumbo, Félix Roberto Mario (Institute of Electrical and Electronics Engineers Inc., 2019-03)
Artículo SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

Aguirre, Fernando Leonel ; Pazos, Sebastián Matías ; Palumbo, Félix Roberto Mario ; Suñé, Jordi; Miranda, Enrique (Frontiers Media, 2021-09)
Artículo Standards for the Characterization of Endurance in Resistive Switching Devices

Lanza, Rodolfo Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; Suñe, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A.; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B.; Aguirre, Fernando Leonel ; Palumbo, Felix Roberto Mario ; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang (American Chemical Society, 2021-11)
Artículo Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

Aguirre, Fernando Leonel ; Rodriguez Fernandez, Alberto; Pazos, Sebastián Matías ; Suñé, Jordi; Miranda, Enrique; Palumbo, Felix Roberto Mario (Institute of Electrical and Electronics Engineers, 2019-08)
Artículo Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

Palumbo, Félix Roberto Mario ; Pazos, Sebastián Matías ; Aguirre, Fernando Leonel ; Winter, R.; Krylov, I.; Eizenberg, M. (Pergamon-Elsevier Science Ltd, 2017-03)
Artículo Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

Lanza, Mario; Palumbo, Felix Roberto Mario ; Shi, Yuanyuan; Aguirre, Fernando Leonel ; Boyeras Baldomá, Santiago ; Yuan, Bin; Yalon, Eilam; Moreno, Enrique; Wu, Tianru; Roldan, Juan B. (John Wiley and Sons Inc, 2021-08-12)

Mostrando ítems 1-19 de 19