FELIX ROBERTO MARIO PALUMBO

Datos académicos

Lugar de trabajo	COMISION NACIONAL DE ENERGIA ATOMICA / GERENCIA D/AREA DE ENERGIA NUCLEAR / UNIDAD DE ACTIVIDAD DE MATERIALES (CAC)
Título	Doctor
Grado	Universitario de posgrado/doctorado
Campo de aplicación	Espacio-Varios
Especialidad	FISICA DE DISPOSITIVOS - MICROELECTRONICA - NANOTECNOLOGIA

PRODUCCION CIENTÍFICO TECNOLÓGICA

Mostrando ítems 21-40 de 59

Artículo Electrical correlation of double-diffused metaloxidesemiconductor transistors exposed to gamma photons, protons, and hot carriers

Palumbo, Félix Roberto Mario ; Faigon, Adrián Néstor ; Curro, Giuseppe (Institute of Electrical and Electronics Engineers, 2011-05)
Artículo Evolution of the gate current in 32 nm MOSFETs under irradiation

Palumbo, Félix Roberto Mario ; Debray, Mario Ernesto; Vega, Nahuel Agustín ; Quinteros, Cynthia Paula ; Kalstein, Ariel ; Guarin, F. (Pergamon-Elsevier Science Ltd, 2016-02)
Artículo Formation and characterization of filamentary current paths in HFO 2-based resistive switching structures

Palumbo, Félix Roberto Mario ; Miranda, E.; Ghibaudo, G.; Jousseaume, V. (Institute of Electrical and Electronics Engineers, 2012-01)
Artículo Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller

Pazos, Sebastian; Zheng, Wenwen; Zanotti, Tommaso; Aguirre, Fernando; Becker, Thales; Shen, Yaqing; Zhu, Kaichen; Yuan, Yue; Wirth, Gilson; Puglisi, Francesco Maria; Roldán, Juan Bautista; Palumbo, Félix Roberto Mario ; Lanza, Mario (Royal Society of Chemistry, 2023-07)
Artículo Hf-based high-k dielectrics for p-Ge MOS gate stacks

Fadida, Sivan; Palumbo, Félix Roberto Mario ; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; Caymax, Matty; Eizenberg, Moshe (American Institute of Physics, 2013-12)
Artículo High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Pazos, Sebastian; Becker, Thales; Villena, Marco Antonio; Zheng, Wenwen; Shen, Yaqing; Yuan, Yue; Alharbi, Osamah; Zhu, Kaichen; Roldán, Juan Bautista; Wirth, Gilson; Palumbo, Félix Roberto Mario ; Lanza, Mario (Wiley VCH Verlag, 2023-02)
Artículo Hot-carrier-injection resilient RF power amplifier using adaptive bias

Pazos, Sebastián Matías ; Aguirre, Fernando Leonel ; Palumbo, Félix Roberto Mario ; Silveira, Fernando (Elsevier, 2020-11)
Artículo Impact of bilayered oxide stacks on the breakdown transients of Metal-Oxide-Semiconductor devices: an experimental study

Pazos, Sebastián Matías ; Boyeras Baldomá, Santiago ; Aguirre, Fernando Leonel ; Krylov, Igor; Eizenberg, M.; Palumbo, Felix Roberto Mario (American Institute of Physics, 2020-05)
Artículo Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

Palumbo, Félix Roberto Mario ; Lombardo,Salvatore; Eizenberg, Moshe (Pergamon-Elsevier Science Ltd, 2016-01)
Artículo Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs

Palumbo, Félix Roberto Mario ; Shekhter, P.; Eizenberg, M. (Elsevier, 2014-01)
Artículo Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs

Palumbo, Félix Roberto Mario ; Aguirre, Fernando Leonel ; Pazos, Sebastián Matías ; Krylov, Igor; Winter, Roy; Eizenberg, Moshe (Pergamon-Elsevier Science Ltd, 2018-11)
Artículo Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks

Tang, Kechao; Palumbo, Félix Roberto Mario ; Zhang, Liangliang; Droopad, Ravi; McIntyre, Paul C. (American Chemical Society, 2017-03)
Artículo Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors

Palumbo, Félix Roberto Mario ; Winter, R.; Tang, K.; McIntyre, P. C.; Eizenberg, M. (American Institute Of Physics, 2017-05)
Artículo Ionizing radiation effects on non volatile read only memory cells

Libertino, Sebania; Corso, Domenico; Lisiansky, Michael; Roizin, Yakov; Palumbo, Félix Roberto Mario ; Principato, Fabio; Pace, Calogero; Finocchiaro, Paolo; Lombardo, Salvatore (Institute of Electrical and Electronics Engineers, 2012-12)
Artículo Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks

Pazos, Sebastián Matías ; Aguirre, Fernando Leonel ; Tang, K.; McIntyre, P.; Palumbo, Félix Roberto Mario (American Institute of Physics, 2018-12)
Artículo Mesoporous metal-oxide-semiconductor capacitors detect intra-porous fluid changes

Gimenez, Rocío; Delgado, Diana C.; Palumbo, Felix Roberto Mario ; Berli, Claudio L. A.; Bellino, Martín G. (Elsevier Science, 2017-04-20)
Artículo Minimization of the line resistance impact on memdiode-based simulations of multilayer perceptron arrays applied to pattern recognition

Aguirre, Fernando Leonel ; Gomez, Nicolás M.; Pazos, Sebastián Matías ; Palumbo, Félix Roberto Mario ; Suñé, Jordi; Miranda, Enrique (MDPI AG, 2021-03)
Artículo Model and fitting results for the filamentary conduction in MIM resistive switching devices

Palumbo, Félix Roberto Mario ; Miranda, Enrique; Ghibaudo, Gerard; Jousseaume, V. (Electrochemical Society Inc., 2011-10)
Artículo Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction

Palumbo, Félix Roberto Mario ; Miranda, Enrique (Institute of Electrical and Electronics Engineers, 2011-02)
Artículo On the thermal models for resistive random access memory circuit simulation

Roldán, Juan B.; González Cordero, Gerardo; Picos, Rodrigo; Miranda, Enrique; Palumbo, Félix Roberto Mario ; Jiménez Molinos, Francisco; Moreno, Enrique; Maldonado, David; Baldomá, Santiago B.; Moner Al Chawa, Mohamad; de Benito, Carol; Stavrinides, Stavros G.; Suñé, Jordi; Chua, Leon O. (MDPI AG, 2021-05)

Mostrando ítems 21-40 de 59