NESTOR GHENZI

Datos académicos

Lugar de trabajo	COMISION NACIONAL DE ENERGIA ATOMICA / GERENCIA D/AREA INVEST Y APLICACIONES NO NUCLEARES / GERENCIA FISICA (CAC)
Título	doctor en fisica
Grado	Universitario de posgrado/doctorado
Campo de aplicación	Ciencia y cultura-Ciencia y tecnologia
Especialidad	Fisica del Sólido- Propiedades físicas de interfaces óxido metal- Dispositivos de Memoria

PRODUCCION CIENTÍFICO TECNOLÓGICA

Mostrando ítems 1-20 de 27

Página siguiente

Artículo A compact model for binary oxides-based memristive interfaces

Ghenzi, Néstor ; Sánchez, María José ; Levy, Pablo Eduardo (IOP Publishing, 2013-10)
Artículo Adaptive threshold in TiO 2 -based synapses

Ghenzi, Nestor ; Barella, Mariano ; Rubi, Diego ; Acha, Carlos Enrique (IOP Publishing, 2019-01)
Evento Bipolar resistive switching on TiO2/Au by conducting Atomic Force Microscopy

Linares Moreau, M. M.; Levy, Pablo Eduardo ; López Mir, L.; Ghenzi, Nestor ; Golmar, Federico ; Granja, Leticia Paula ; Ocal, C.; Levy, Pablo Eduardo (Elsevier, 2019)
Artículo Building memristive and radiation hardness TiO2-based junctions

Ghenzi, Néstor ; Rubi, Diego ; Mangano, E.; Gimenez, G.; Lell, Julián Alejandro; Zelcer, Andrés ; Stoliar, Pablo Alberto; Levy, Pablo Eduardo (Elsevier, 2013-11)
Artículo Caracterización eléctrica y modelado de memorias no volátiles basadas en óxidos

Ghenzi, Néstor (Asociación Argentina de Materiales, 2017-05)
Artículo Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices

Ghenzi, Néstor ; Quinteros, Cynthia Paula ; Miranda, E.; Levy, Pablo Eduardo (American Institute of Physics, 2025-07)
Artículo Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta 2 O 5 /Al 2 O 3 /TiN Memristors

Park, Tae Won; Moon, Jiwon; Shin, Dong Hoon; Kim, Hae Jin; Kim, Seung Soo; Cho, Jea Min; Park, Hyungjun; Woo, Kyung Seok; Kim, Dong Yun; Cheong, Sunwoo; Song, Haewon; Shin, Jong Hoon; Lee, Soo Hyung; Ghenzi, Néstor ; Hwang, Cheol Seong (American Chemical Society, 2024-11)
Artículo Fully Resistive In‐Memory Cryptographic Engine with Dual‐Polarity Memristive Crossbar Array

Kim, Yeong Rok; Shin, Dong Hoon; Ghenzi, Néstor ; Cheong, Sunwoo; Cho, Jea Min; Shim, Sung Keun; Lee, Jung Kyu; Kim, Byeong Su; Yim, Seongpil; Park, Taegyun; Hwang, Cheol Seong (Wiley VCH Verlag, 2024-12)
Artículo Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation

Lee, Yonghee; Lee, Seung Yoon; Choi, Jinheon; Ghenzi, Néstor ; Han, Joon Kyu; Hwang, Cheol Seong (Wiley VCH Verlag, 2025-05)
Artículo Heterogeneous density-based clustering with a dual-functional memristive array

Shin, Dong Hoon; Cheong, Sunwoo; Lee, Soo Hyung; Jang, Yoon Ho; Park, Taegyun; Han, Janguk; Shim, Sung Keun; Kim, Yeong Rok; Han, Joon Kyu; Baek, In Kyung; Ghenzi, Néstor ; Hwang, Cheol Seong (Royal Society of Chemistry, 2024-07)
Artículo Heterogeneous reservoir computing in second-order Ta 2 O 5 /HfO 2 memristors

Ghenzi, Néstor ; Park, Tae Won; Kim, Seung Soo; Kim, Hae Jin; Jang, Yoon Ho; Woo, Kyung Seok; Hwang, Cheol Seong (Royal Society of Chemistry, 2023-12)
Artículo Hyperplane tree-based data mining with a multi-functional memristive crossbar array

Cheong, Sunwoo; Shin, Dong Hoon; Lee, Soo Hyung; Jang, Yoon Ho; Han, Janguk; Shim, Sung Keun; Han, Joon Kyu; Ghenzi, Néstor ; Hwang, Cheol Seong (Royal Society of Chemistry, 2024-10)
Artículo Impact of sub- and supra- threshold switching in the synaptic behavior of TiO2 memristors

Ghenzi, Néstor ; Levy, Pablo Eduardo (Elsevier Science, 2018-06)
Artículo In‐Materia Annealing and Combinatorial Optimization Based on Vertical Memristive Array

Lee, Soo Hyung; Cheong, Sunwoo; Cho, Jea Min; Ghenzi, Néstor ; Shin, Dong Hoon; Jang, Yoon Ho; Han, Janguk; Park, Tae Won; Kim, Dong Yun; Shim, Sung Keun; Han, Joon Kyu; Kim, Seung Soo; Hwang, Cheol Seong (Wiley VCH Verlag, 2024-08)
Artículo Manganite based memristors: Influence of the electroforming polarity on the electrical behavior and radiation hardness

Rubi, Diego ; Kalstein, Ariel ; Roman Acevedo, Wilson Stibens ; Ghenzi, Néstor ; Quinteros, Cynthia Paula ; Mangano, E.; Granell, Pablo Nicolás; Golmar, Federico ; Marlasca, F. G.; Suarez, Sergio Gabriel ; Bernardi, Guillermo Carlos ; Albornoz, C.; Leyva de Guglielmino, Ana Gabriela; Levy, Pablo Eduardo (Elsevier Science Sa, 2015-03)
Artículo Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing

Woo, Kyung Seok; Park, Hyungjun; Ghenzi, Néstor ; Talin, A. Alec; Jeong, Taeyoung; Choi, Jung-Hae; Oh, Sangheon; Jang, Yoon Ho; Han, Janguk; Williams, R. Stanley; Kumar, Suhas; Hwang, Cheol Seong (American Chemical Society, 2024-06)
Artículo Modeling electronic transport mechanisms in metal-manganite memristive interfaces

Gomez Marlasca, F.; Ghenzi, Néstor ; Leyva, Adelma Graciela ; Albornoz, Cecilia Andrea; Stoliar, Pablo Alberto; Rubi, Diego ; Levy, Pablo Eduardo (American Institute of Physics, 2013-04)
Artículo Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation

Blasco, Juli; Ghenzi, Néstor ; Suãé, Jordi; Levy, Pablo Eduardo ; Miranda, Enrique (Institute of Electrical and Electronics Engineers, 2014-01)
Artículo Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO 2 /RuO 2 Memristor

Shin, Dong Hoon; Park, Hyungjun; Ghenzi, Néstor ; Kim, Yeong Rok; Cheong, Sunwoo; Shim, Sung Keun; Yim, Seongpil; Park, Tae Won; Song, Haewon; Lee, Jung Kyu; Kim, Byeong Su; Park, Taegyun; Hwang, Cheol Seong (American Chemical Society, 2024-03)
Artículo One-transistor one-resistor (1T1R) cell for large-area electronics

Ghenzi, Néstor ; Rozenberg, M.; Pietrobon, L.; Llopis, R.; Gay, R.; Beltrán, M.; Knez, M.; Hueso, L.; Stoliar, P. (American Institute of Physics, 2018-08)

Mostrando ítems 1-20 de 27

Página siguiente